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 NZL5V6ATT1 SC75 Dual Common Anode Zener for ESD Protection
This dual monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its dual junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features http://onsemi.com
CATHODE 1 2 CATHODE
3 ANODE
* * * * * * * * * *
SC-75 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1 mA @ 3 V Breakdown Voltage: 5.3 - 5.9 V @ 1 mA Low Capacitance (40 pF typical between terminals) ESD Protection Meeting IEC61000-4-2 Pb-Free Package is Available
3 1 2
MARKING DIAGRAM
SC-75 CASE 463 STYLE 4 56 M G
56 M G G 1 = Device Code = Date Code* = Pb-Free Package
Mechanical Characteristics
Void Free, Transfer-Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications
(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device NZL5V6ATT1 NZL5V6ATT1G Package SC-75 SC-75 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
May, 2006 - Rev. 3
1
Publication Order Number: NZL5V6ATT1/D
NZL5V6ATT1
ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3, or 2 and 3)
Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK IPP VC VBR VRWM IF I (TA = 25C unless otherwise noted)
IR VF IT
V
Uni-Directional TVS
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Steady State Power - 1 Diode (Note 1) Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge IEC61000-4-2, Air Discharge IEC61000-4-2, Contact Discharge Symbol PD TJmax TJ Tstg VPP TL Value 150 150 -55 to +150 "15 "8 260 Unit mW C C kV C
Lead Solder Temperature (10 seconds duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad.
ELECTRICAL CHARACTERISTICS
Typical Capacitance @ 0 V Bias @ 1 MHz (pF) 40
Breakdown Voltage VBR @ 1 mA (V) Device NZL5V6 Min 5.3 Nom 5.6 Max 5.9
Leakage Current IRM @ VRM = 3.0 V (mA) 1.0
VC @ IPP (Note 2) VC (V) 9.97 IPP (A) 6.11
Max VF @ IF = 10 mA (V) 1.25
2. Surge current waveform per Figure 2 and clamping voltage (VC) per Figure 6.
http://onsemi.com
2
NZL5V6ATT1
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 % OF PEAK PULSE CURRENT 100 90 80 70 60 50 40 30 20 10 0 0 20 40 t, TIME (ms) 60 80 tp tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms
0
25
50
75 100 125 TEMPERATURE (C)
150
175
Figure 1. Steady State Power Derating Curve
Figure 2. 8 X 20 ms Pulse Waveform
100 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY
45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 BIAS VOLTAGE (V) 4 4.5 5
PPK, PEAK POWER (W)
10
NOTE: Non-Repetitive Surge 1 10 100 tp, PULSE WIDTH (ms) 1000
Figure 3. Pulse Rating Curve
Figure 4. Capacitance
1 VC, CLAMPING VOLTAGE (V) IF, FORWARD CURRENT (A)
11 10 9 8 7 6 5 1.0
0.1
0.01
0.001
0.6
0.7
0.8 0.9 1.1 1.2 1 VF, FORWARD VOLTAGE (V)
1.3
1.4
2.0
3.0 4.0 5.0 6.0 IPP, PEAK PULSE CURRENT (A)
7.0
Figure 5. Forward Current versus Forward Voltage
Figure 6. Clamping Voltage versus Peak Pulse Current (8 x 20 ms Pulse)
http://onsemi.com
3
NZL5V6ATT1
PACKAGE DIMENSIONS
SC-75/SOT-416 CASE 463-01 ISSUE F
-E-
2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.
e
1
-D-
b 3 PL 0.20 (0.008)
M
D
HE
0.20 (0.008) E
DIM A A1 b C D E e L HE
MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70
INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027
C
A L A1
STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE
SOLDERING FOOTPRINT*
0.356 0.014
1.803 0.071
0.787 0.031
0.508 0.020
1.000 0.039
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
4
NZL5V6ATT1/D


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